Silicon MOSFETs are also capable of handling medium levels of power and overlap in functionality somewhat. With the introduction of the 800V the need of wide band Gap technologies such as the Silicon Carbide (SiC)-based substrates are fairly new and hold even more promise with power density at higher switching frequencies and with better thermal characteristics.
Silicon Carbide (SiC) is characterized by a polymorphism structure in which there are 250 different crystal forms. Initially, when Edward Goodrich Acheson patented the method of making silicon carbide in powder form in 1893, it was used for abrasive applications. With the advancement of material technology, silicon carbide has been developed in different forms
These diodes have been designed for harsh environment space applications such as inner Solar System exploration probes. More specifically these diodes are being tested to be the blocking diodes of the solar panels for the Bepi Colombo mission.
Even if there are known weaknesses of SiC Schottky diodes while being biased at high voltage in dense ions environments, they can still be the best option for certain very demanding operational conditions. The compatibility of these devices is analysed in this technical note.
Alter RADNEXT Transnational Access reviewers have accepted technology HISiC (Heavy Ions tolerant SiC diodes configurations) project proposal with H2020 funding.
SiC weakness under heavy ions radiation is not a secret. The radiation improved SiC multi-die configuration modules will be tested in this project, demonstrating SOAs (Safe Operating Area) up to voltages requested by industry.
The Silicon Carbide power diodes were specifically designed for protection of solar cells arrays in solar panels mounted in satellites and space exploration modules. The first batches of devices are currently used for two European Space Agency missions, BepiColombo and Solar Orbiter.
New failure modes not observed in Silicon appear while testing SiC MOSFET and Schottky diodes and under heavy ions radiation. Gate damage in transistors remains undetected even monitoring drain current and gate leakage of the transistor under high voltage biasing conditions.
Space qualified silicon carbide power diodes developed by CNM-CSIC in collaboration with ALTER TECHNOLOGY will be handled as ALTER TECHNOLOGY specific product for high reliability and harsh environment-related markets.