Calibration Sources in Vacuum Conditions

Posted by Alejandro López Moya
On January 13, 2022
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Our Optoelectronics department knows how to fulfill this need. One of our customers requested that we carry a thermal cycling test at extreme temperatures (between 93ºC and -178ºC) over some VIS-NIR calibration sources (five samples at a time). At the same time, these sources were tested in vacuum conditions, and electro-optical characterization at different temperatures during cycling was requested.

High power laser screening test – Samples Burn-In

Posted by Juan Moreno Echarri
On January 12, 2022
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Laser screening tests are done to comply with users’ requirements; two different challenges must be addressed. First, high-power lasers (30watts in this case) require specific test setups and important safety considerations to avoid dangerous situations in case of DUT/setup failure.

High power laser screening test for samples Burn-In

Posted by Monica Rodriguez
On January 12, 2022
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Current flow measurement using precision resistors, makes a lot of sense!

Posted by Javier Alejandro de la Ossa Fernández
On January 10, 2022
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Current-sensing techniques are intrusive, meaning that somehow they will affect the system performance. It’s usually necessary to insert “something” in the middle of the path that goes from the power source to the load through which the current that we need to monitor flows.

4 terminal current sense resistors in parallel configuration

Posted by Emilio Cano García
On December 23, 2021
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Resistor engineers designed to mitigate these losses must use current sensor resistors with low resistive values. This is the greatest complexity of this method, choosing the better resistor to obtain a balance between precision, energy loss, and costs in the current sensor

SiC Junction Barrier Schottky (JBS) diodes up to 1.2kV

Posted by doEEEt Media Group
On December 21, 2021
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The use of wide-bandgap materials, such as SiC, enables higher switching speeds and higher breakdown voltages, allowing for smaller, faster, more reliable, and more efficient power devices, and that’s why it is of interest in Space applications, where the operating conditions are extreme (high temperature and high radiation levels), is growing fast.

Quad configuration SiC Schottky Diode

Posted by doEEEt Media Group
On December 21, 2021
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The components are available in single-channel ATN-CNM-300S-2 and two channels ATN-CNM-300S-4; each channel has two SiC Schottky diodes in series, increasing the maximum safe blocking voltage of the device while operating under heavy ions. Actual flight radiation conditions can be tested under request as already performed successfully for the ESA-BepiColombo mission with a single die the previous version.

SiC Schottky diodes under extreme temperatures

Posted by doEEEt Media Group
On December 21, 2021
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Read and download the full datasheet of one of our components. This component also has been included in the ESCC 5106/022 specification, and listed in the EPPL (European Preferred Part List).

Electrical characterization of 1.2kV SiC Schottky diode at a wide temperature range

Posted by Javier Alejandro de la Ossa Fernández
On November 29, 2021
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This article reports the results obtained from an electrical characterization under high temperatures (25°C and 100°C), where forward voltage and reserve current were monitored for a set of 130 devices. The optimization process for these devices reflects an excellent behavior in on mode and a right compromise in a reverse way for the chosen application.

Prototyping a 1.2kV SiC Schottky diode for TWTAs

Posted by Javier Alejandro de la Ossa Fernández
On November 29, 2021
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The importance of SiC devices in the power electronics field and how this can be particularly useful in space applications. Also, we set the foundations for a SiC diode that complies with the optimized performances needed for the rectifier module in the next generation of EPCs for TWTAs.