Silicon Carbide -SiC- Diodes


We have Silicon Carbide (SiC) Diodes customized to the extreme, plus SiC Specific testing capabilities not offered by competitors. 

Custom application targeted SiC Schottky diodes (both pure Schottky and JBS). Customizable in die, package, mounting solution, high-temperature operation/high voltage, and fast switching. 

Our solution is the only SiC device existing in the EPPL (ESA European Preferred Part List). The European Preferred Part List (EPPL) is an extensive list of parts that can be used as a guideline for projects at the European Space Agency (ESA). 

Why Silicon Carbide (SiC)? 

  • Silicon carbide (SiC) will operate up to any temperature you need. 
  • Silicon carbide (SiC) will allow you to switch faster with 0 recovery time. 
  • Custom packages can be designed to fit your already existing footprint. 
  • Custom die configuration will match your application needs, and multichip will enable more compact solutions. 

Silicon Carbide Technology

Solution tailored to your needs

Silicon Carbide (SiC) specific testing capabilities

We provide specific assembly and testing capabilities for very extreme temperature applications, including:

  • Packaging and custom assembly techniques
  • Full reliability and testing capabilities include constructional, mechanical, thermal, radiation, and endurance tests, including performance validation from -190ºC to +400ºC.

Here are some cases in which Silicon Carbide (SiC) technology has been used:

CASE 1: High voltage operation under heavy ions radiation

Diodes will operate under heavy ions radiation and reverse voltage above 200V

Solution: SiC diode with custom radiation testing under final application conditions. Our custom testing will replicate the conditions of the final usage and ensure the diode meets your needs. 

CASE 2: Operation under extreme temperatures

Diodes will operate above 200°C or below -55°C

Solution: Pure Schottky diodes with high temp packaging. These diodes will handle up to 300°C.

CASE 3: High integration level needed

High integration level needed. User needs to mount an increased number of diodes due to design requirements

Solution: Quad configuration. Two lines or even more per diode will allow both space and mass saving of the design.

CASE 4: High Power solutions for satellyte systems

SiC diodes that comply the optimized performances needed for the rectifier module in a next generation of EPCs for TWTAs.

Solution: SiC Junction Barrier Schottky (JBS) diodes up to 1.2kV reverse voltage for high-frequency or hard switching power space applications. They have already been used successfully in ESA projects.

Our solution is the only Silicon Carbide (SiC) device existing in the

EPPL (ESA European preferred part list)

Schottky Barrier Rectifiers – Component Catalogue

Check into the catalog of our Silicon Carbide (SiC) devices that will allow you to operate higher in temperature and faster switching than Si ones.

  • Forget about Si limits and operate your Silicon Carbide (SiC) diodes at environment temperatures of 300ºC.
  • Increase the power density of your system with our diodes that combine the benefits of JBS with SiC thermal conductivity.
  • All our components have a hermetic package.


250V, 2.5A – TO-257 


ATN-CNM-300S-4 ⇐ 

Two-channel 300V, 2.5A – TO-254 (6-Lead) 



1300V, 2A – LCC-2 


Technical Experience

Quad configuration SiC Schottky Diode

doEEEt Media Group
December 21, 2021
Quad configuration
The components are available in single-channel ATN-CNM-300S-2 and two channels ATN-CNM-300S-4; each channel has two SiC Schottky diodes in series, increasing the maximum safe blocking voltage of the device while operatin...

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