Silicon Carbide (SiC): Properties and applications

Posted by Emilio Cano García
On March 10, 2022
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Silicon Carbide (SiC) is characterized by a polymorphism structure in which there are 250 different crystal forms. Initially, when Edward Goodrich Acheson patented the method of making silicon carbide in powder form in 1893, it was used for abrasive applications. With the advancement of material technology, silicon carbide has been developed in different forms

SiC Junction Barrier Schottky (JBS) diodes up to 1.2kV

Posted by doEEEt Media Group
On December 21, 2021
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The use of wide-bandgap materials, such as SiC, enables higher switching speeds and higher breakdown voltages, allowing for smaller, faster, more reliable, and more efficient power devices, and that’s why it is of interest in Space applications, where the operating conditions are extreme (high temperature and high radiation levels), is growing fast.

Quad configuration SiC Schottky Diode

Posted by doEEEt Media Group
On December 21, 2021
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The components are available in single-channel ATN-CNM-300S-2 and two channels ATN-CNM-300S-4; each channel has two SiC Schottky diodes in series, increasing the maximum safe blocking voltage of the device while operating under heavy ions. Actual flight radiation conditions can be tested under request as already performed successfully for the ESA-BepiColombo mission with a single die the previous version.

SiC Schottky diodes under extreme temperatures

Posted by doEEEt Media Group
On December 21, 2021
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Read and download the full datasheet of one of our components. This component also has been included in the ESCC 5106/022 specification, and listed in the EPPL (European Preferred Part List).

SiC Testing: Heavy Ions tolerant SiC diodes

Posted by doEEEt Media Group
On October 4, 2021
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Alter RADNEXT Transnational Access reviewers have accepted technology HISiC (Heavy Ions tolerant SiC diodes configurations) project proposal with H2020 funding. SiC weakness under heavy ions radiation is not a secret. The radiation improved SiC multi-die configuration modules will be tested in this project, demonstrating SOAs (Safe Operating Area) up to voltages requested by industry.

New SiC Schottky Diodes for Space Applications

Posted by Emilio Cano García
On September 29, 2021
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Silicon Schottky diodes are widely used in applications where high-speed switching is required to achieve more efficient systems due to their fast recovery time and low forward voltage. However, this type of diode has a lower reverse voltage (with a maximum typically around 100 V) than conventional rectifier diodes. Furthermore, the leakage current losses are higher.

Issue 212 of ESCC QUALIFIED PART LIST (QPL)

Posted by Emilio Cano García
On December 18, 2020
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The changes in issue 212 of ESCC QUALIFIED PART LIST (QPL) are included in the DCR 1395 and detailed herein below

New DLA Qualified Schottky barrier rectifiers

Posted by Emilio Cano García
On September 15, 2020
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Schottky barrier rectifiers 1N5817-1 and 1N5819-1 from VPT Components have been included in DLA QPL-19500 (Semiconductor Devices Qualified Part List).

Issue 40 of EUROPEAN PREFERRED PARTS LIST (EPPL)

Posted by Emilio Cano García
On July 21, 2020
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The changes in issue 39 of EUROPEAN PREFERRED PARTS LISTS (EPPL) are included in the DCR 1310 and detailed in this post

New Generation of Rad-hard Schottky & Rectifiers Diodes for Space

Posted by Emilio Cano García
On July 15, 2020
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STMicroelectronics has announced a new generation of Schottky and Rectifiers diodes into his space products. They are available in different hermetic packages and ESCC qualified.