Silicon Carbide (SiC): Properties and applications

Posted by Emilio Cano García
On March 10, 2022
0

Silicon Carbide (SiC) is characterized by a polymorphism structure in which there are 250 different crystal forms. Initially, when Edward Goodrich Acheson patented the method of making silicon carbide in powder form in 1893, it was used for abrasive applications. With the advancement of material technology, silicon carbide has been developed in different forms

EEE Components, PASSIVES, SiC Testing

SIC diodes versus Heavy Ions (SEE)

Posted by Juan Moreno Echarri
On February 5, 2022
0

Even if there are known weaknesses of SiC Schottky diodes while being biased at high voltage in dense ions environments, they can still be the best option for certain very demanding operational conditions. The compatibility of these devices is analysed in this technical note.

EEE Components, PASSIVES

SiC Junction Barrier Schottky (JBS) diodes up to 1.2kV

Posted by doEEEt Media Group
On December 21, 2021
0

The use of wide-bandgap materials, such as SiC, enables higher switching speeds and higher breakdown voltages, allowing for smaller, faster, more reliable, and more efficient power devices, and that’s why it is of interest in Space applications, where the operating conditions are extreme (high temperature and high radiation levels), is growing fast.

EEE Components, PASSIVES

Quad configuration SiC Schottky Diode

Posted by doEEEt Media Group
On December 21, 2021
0

The components are available in single-channel ATN-CNM-300S-2 and two channels ATN-CNM-300S-4; each channel has two SiC Schottky diodes in series, increasing the maximum safe blocking voltage of the device while operating under heavy ions. Actual flight radiation conditions can be tested under request as already performed successfully for the ESA-BepiColombo mission with a single die the previous version.

EEE Components, PASSIVES

SiC Schottky diodes under extreme temperatures

Posted by doEEEt Media Group
On December 21, 2021
0

Read and download the full datasheet of one of our components. This component also has been included in the ESCC 5106/022 specification, and listed in the EPPL (European Preferred Part List).

ACTIVES, EEE Components, PASSIVES

Prototyping and Characterization of 1200V Schottky SiC Diode

Posted by doEEEt Media Group
On November 25, 2021
0

The study will be focused on the development of high voltage SiC Schottky diode in a package suitable for space application with the primary goal to characterize the performances of the devices in terms of switching capability, reliability of the technology, and preliminary characterization of static and dynamic parameters as a function of temperatures as well as to characterize the thermal impedance and resistance of the proposed package solution.

SiC Testing

SiC Testing: Heavy Ions tolerant SiC diodes

Posted by doEEEt Media Group
On October 4, 2021
0

Alter RADNEXT Transnational Access reviewers have accepted technology HISiC (Heavy Ions tolerant SiC diodes configurations) project proposal with H2020 funding. SiC weakness under heavy ions radiation is not a secret. The radiation improved SiC multi-die configuration modules will be tested in this project, demonstrating SOAs (Safe Operating Area) up to voltages requested by industry.

ACTIVES, EEE Components

New SiC Schottky Diodes for Space Applications

Posted by Emilio Cano García
On September 29, 2021
0

Silicon Schottky diodes are widely used in applications where high-speed switching is required to achieve more efficient systems due to their fast recovery time and low forward voltage. However, this type of diode has a lower reverse voltage (with a maximum typically around 100 V) than conventional rectifier diodes. Furthermore, the leakage current losses are higher.

SiC Testing

Silicon Carbide Power Diodes

Posted by doEEEt Media Group
On August 12, 2021
0

The Silicon Carbide power diodes were specifically designed for protection of solar cells arrays in solar panels mounted in satellites and space exploration modules. The first batches of devices are currently used for two European Space Agency missions, BepiColombo and Solar Orbiter.

ACTIVES, EEE Components, ENDURANCE, ENVIRONMENTAL & RADIATION, INSPECTION, ELECTRICAL & VERIFICATION, Non-standard testing, TESTING

Radiation Hardened SIC MOS Structures

Posted by doEEEt Media Group
On December 12, 2020
0

Project: PROTOTYPING AND CHARACTERISATION OF RADIATION HARDENED SIC MOS STRUCTURES, Customer: ESA (European Space Agency)

Page 1 of 212