Testing SiC Schottky Diodes for Heavy Ions Optimization

Posted by Juan Moreno Echarri
On August 9, 2022
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SiC Schottky diodes have certain limitations in terms of reverse voltage bias in heavy ions environments. However, they can still be the best option for certain very demanding operational conditions.

Issue 44 of EUROPEAN PREFERRED PARTS LIST (EPPL) | New Issue

Posted by Emilio Cano García
On June 1, 2022
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The changes in issue 44 of EUROPEAN PREFERRED PARTS LISTS (EPPL) are included in the DCR 1486 and detailed in this post

Issue 43 of EUROPEAN PREFERRED PARTS LIST (EPPL)

Posted by Emilio Cano García
On January 21, 2022
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The changes in issue 43 of EUROPEAN PREFERRED PARTS LISTS (EPPL) are included in the DCR 1476 and detailed in this post

SiC Junction Barrier Schottky (JBS) diodes up to 1.2kV

Posted by doEEEt Media Group
On December 21, 2021
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The use of wide-bandgap materials, such as SiC, enables higher switching speeds and higher breakdown voltages, allowing for smaller, faster, more reliable, and more efficient power devices, and that’s why it is of interest in Space applications, where the operating conditions are extreme (high temperature and high radiation levels), is growing fast.

Quad configuration SiC Schottky Diode

Posted by doEEEt Media Group
On December 21, 2021
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The components are available in single-channel ATN-CNM-300S-2 and two channels ATN-CNM-300S-4; each channel has two SiC Schottky diodes in series, increasing the maximum safe blocking voltage of the device while operating under heavy ions. Actual flight radiation conditions can be tested under request as already performed successfully for the ESA-BepiColombo mission with a single die the previous version.

SiC Schottky diodes under extreme temperatures

Posted by doEEEt Media Group
On December 21, 2021
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Read and download the full datasheet of one of our components. This component also has been included in the ESCC 5106/022 specification, and listed in the EPPL (European Preferred Part List).

Silicon Carbide Power Diodes

Posted by doEEEt Media Group
On August 12, 2021
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The Silicon Carbide power diodes were specifically designed for protection of solar cells arrays in solar panels mounted in satellites and space exploration modules. The first batches of devices are currently used for two European Space Agency missions, BepiColombo and Solar Orbiter.