Issue 45 of EUROPEAN PREFERRED PARTS LIST (EPPL) | New Issue

Posted by Emilio Cano García
On December 19, 2022
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The changes in issue 45 of EUROPEAN PREFERRED PARTS LISTS (EPPL) are included in the DCR 1525 and detailed in this post

SiC reliability: Defects detection test for SiC devices

Posted by Juan Moreno Echarri
On October 26, 2022
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Screening is paramount to achieving this SiC reliability level requested by all industries, and for some specific niche applications, special precautions should be taken into consideration.

Testing SiC Schottky Diodes for Heavy Ions Optimization

Posted by Juan Moreno Echarri
On August 9, 2022
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SiC Schottky diodes have certain limitations in terms of reverse voltage bias in heavy ions environments. However, they can still be the best option for certain very demanding operational conditions.

Issue 44 of EUROPEAN PREFERRED PARTS LIST (EPPL)

Posted by Emilio Cano García
On June 1, 2022
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The changes in issue 44 of EUROPEAN PREFERRED PARTS LISTS (EPPL) are included in the DCR 1486 and detailed in this post

SIC diodes versus Heavy Ions (SEE)

Posted by Juan Moreno Echarri
On February 5, 2022
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Even if there are known weaknesses of SiC Schottky diodes while being biased at high voltage in dense ions environments, they can still be the best option for certain very demanding operational conditions. The compatibility of these devices is analysed in this technical note.

Issue 43 of EUROPEAN PREFERRED PARTS LIST (EPPL)

Posted by Emilio Cano García
On January 21, 2022
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The changes in issue 43 of EUROPEAN PREFERRED PARTS LISTS (EPPL) are included in the DCR 1476 and detailed in this post

SiC Junction Barrier Schottky (JBS) diodes up to 1.2kV

Posted by doEEEt Media Group
On December 21, 2021
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The use of wide-bandgap materials, such as SiC, enables higher switching speeds and higher breakdown voltages, allowing for smaller, faster, more reliable, and more efficient power devices, and that’s why it is of interest in Space applications, where the operating conditions are extreme (high temperature and high radiation levels), is growing fast.

Quad configuration SiC Schottky Diode

Posted by doEEEt Media Group
On December 21, 2021
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The components are available in single-channel ATN-CNM-300S-2 and two channels ATN-CNM-300S-4; each channel has two SiC Schottky diodes in series, increasing the maximum safe blocking voltage of the device while operating under heavy ions. Actual flight radiation conditions can be tested under request as already performed successfully for the ESA-BepiColombo mission with a single die the previous version.

SiC Schottky diodes under extreme temperatures

Posted by doEEEt Media Group
On December 21, 2021
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Read and download the full datasheet of one of our components. This component also has been included in the ESCC 5106/022 specification, and listed in the EPPL (European Preferred Part List).

Silicon Carbide Power Diodes

Posted by doEEEt Media Group
On August 12, 2021
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The Silicon Carbide power diodes were specifically designed for protection of solar cells arrays in solar panels mounted in satellites and space exploration modules. The first batches of devices are currently used for two European Space Agency missions, BepiColombo and Solar Orbiter.