125 results found for MIL-STD-88
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to nonionizing energy loss (NIEL) degradation.
DLA
Method
3 /
Active
The thin film corrosion test is performed for the purpose of demonstrating the quality or reliability of devices subjected to the specified conditions over a specified...
DLA
Method
/
Active
The purpose of this method is to define a technique for assuring a conformance to a maximum or minimum mean of a parameter measured in any test method listed in...
DLA
Method
/
Active
This method establishes screening, qualification, and quality conformance requirements for the testing of complex monolithic microcircuits to assist in achieving the...
DLA
Method
4 /
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable
DLA
Method
/
Active
This method establishes the means for measuring power supply currents of digital microelectronic devices such as TTL, DTL, RTL, ECL, and MOS.
DLA
Method
1 /
Active
This destructive test is intended to determine the integrity of all primary and undercoat lead finishes.
DLA
Method
4 /
Active
The purpose of this test is to measure the strength of internal bonds between a semiconductor die and a substrate to which it is attached in a face-bond configuration
DLA
Method
1 /
Active
total dose test of the IS-2981EH octal source driver. Parts were irradiated to 200 krad(Si) at low dose rate under biased and unbiased conditions as outlined in...
TD
/ 0
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to output short circuit...
DLA
Method
1 /
Active