125 results found for MIL-STD-88
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to measure strengths of bonds external to leadless microelectronic packages (e.g., solder bonds from chip carrier terminals to...
DLA
Method
1 /
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document with regard to LOW level output drive...
DLA
Method
1 /
Active
This test procedure specifies the methods by which fault coverage is reported for a test program applied to a microcircuit herein referred to as the device under test...
DLA
Method
1 /
Active
The purpose of this test is to determine the effect on microelectronic devices of storage at elevated temperatures without electrical stress applied.
DLA
Method
2 /
Active
This method establishes the procedure for classifying microcircuits according to their susceptibility to damage or degradation by exposure to electrostatic discharge...
DLA
Method
9 /
Active
The purpose of this examination is to nondestructively detect defects within the sealed case, especially those resulting from the sealing process, and internal defects...
DLA
Method
11 /
Active
HS1840ARH 16-channel. Parts were tested at low and high dose rate under biased and unbiased conditions as outlined in MIL-STD-883 Test Method 1019.7, to a maximum...
TD
/ 0
Active
This test is conducted to determine the resistance of a part to extremes of high and low temperatures, and to the effect of alternate exposures to these extremes.
DLA
Method
9 /
Active
High dose rate testing to 300 krad(Si) . Low dose rate testing to 150 krad(Si) . The high dose rate irradiations were done at 65 rad(Si)/s and the low dose rate work...
TD
/ 0
Active
Samples were tested at low and high dose rate under biased and unbiased conditions, as outlined in MIL-STD-883 Test Method 1019, to a total dose of 100krad(Si) at LDR...
TD
/
Active