The behaviour of GaN power HEMTs subjected to short circuit

Posted by Omar CHIHANI
On October 26, 2022
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This paper addresses the robustness of enhancement-mode GaN HEMTs under short circuit (SC) conditions. Single and repetitive SC using different voltages and durations have been applied in order to understand the behavior of those components while subjected to extreme conditions resulting in SC.

ACTIVES, EEE Components, PASSIVES, RF & MW, SPECIFICATIONS / QPLs

Issue 203 of ESCC QUALIFIED PART LIST (QPL)

Posted by Emilio Cano García
On February 11, 2020
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Check in our lastest post in doEEEt Technical Blog, what have been the changes in issue 203 of ESCC QUALIFIED PART LIST (QPL)?

ALTER Projects, ENDURANCE, ENVIRONMENTAL & RADIATION, INSPECTION, ELECTRICAL & VERIFICATION, PHYSICAL, MECHANICAL & ASSEMBLY, TESTING

Slogan GaN based technologies

Posted by doEEEt Media Group
On January 13, 2020
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SLOGAN is an international research project co-funded from EU 7th Framework Programme. The project Space Qualification of High-Power SSPA based on GaN technology (SLOGAN) aims at designing, developing, implementing a GaN SSPA Engineering Qualification Model (EQM) for the next generation of Galileo satellites.