Automotive SiC module technology analysis and radiation testing

Posted by doEEEt Media Group
On September 22, 2022
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Silicon MOSFETs are also capable of handling medium levels of power and overlap in functionality somewhat. With the introduction of the 800V the need of wide band Gap technologies such as the Silicon Carbide (SiC)-based substrates are fairly new and hold even more promise with power density at higher switching frequencies and with better thermal characteristics.

SiC Testing

Testing SiC Schottky Diodes for Heavy Ions Optimization

Posted by Juan Moreno Echarri
On August 9, 2022
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SiC Schottky diodes have certain limitations in terms of reverse voltage bias in heavy ions environments. However, they can still be the best option for certain very demanding operational conditions.