The demand for the thin film integrated passive devices is on the rise due to the precision and volumetric efficiency that these components offer when compared to traditional individual parts such as capacitors, resistors, inductors and overvoltage protection devices, making them a desirable option for design engineers who require unique solutions for the next generation of ultra-small modules and devices.
TDK Corporationextends its Flexield family of magnetic shielding shielding materials with the introduction of the IFQ06, offering high permeability (μ’) and low magnetic loss (μ”) designed for near-field communications (NFC) applications.
The IFQ06 material provides highly effective protection against performance-reducing design features that can complicate NFC designs, such as metal objects directly behind the antenna.
Murata has expanded the lineup of CAN FD-compatible chip common mode choke coils to include new 51µH products with existing 100µH products. This product is effective in reducing noise from CAN or CAN-FD signal lines in in-vehicle networks and satisfies DCMR Class 3 requirements for common mode choke coils used in CAN FD networks as specified in IEC62228-3*5
The GRM series benefits from key Murata innovations, including the company’s proprietary thin layer forming technology, plus a fully optimized high-precision lamination process. The 4.0VDC-rated GRM035R60G106M products have a -55°C to 85°C temperature range and are already in production. Also, the GRM035C80E106M with a rated voltage of 2.5VDC at -55°C to 105°C goes into mass production this September, and the GRM035R60J106M with a rated voltage of 6.3VDC at -55°C to 85°C in 2024.
With the increasing market for electrified vehicles (EVs), the demand for onboard chargers (OBCs) is growing fast. OBCs open up the possibility to charge the car at fast-charging DC stations and with AC sources in a reasonable time. Such systems are currently going up to 22 kW with operating voltages up to 800 V.
Silicon-based capacitors are typically single MIM (metal-insulator-metal) or multiple MIM structure electrostatic capacitors built by semiconductor technologies.
Silicon dielectrics are either silicon dioxide (MIS) or silicon nitride (MOS) insulating layers; however, semiconductor manufacturing techniques such as atomic layer deposition (ALD) can be used to form other dielectric materials on top of the silicon substrate. High-density silicon-based capacitors use 3D nano-structured electrodes to achieve higher surface area and, thus, higher capacitance value.