461 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This section describes detailed requirements for a DPA of commonly used RF devices. These requirements supplement the general requirements in section 4.
DLA
Method
/ C
Active
The purpose of this test method is to determine the small signal junction capacitance of the tunnel diode under the specified conditions.
DLA
Method
/ w/Change3
Active
This method establishes screening procedures for total lot screening of microelectronics to assist in achieving levels of quality and reliability commensurate with the...
DLA
Method
13 /
Active
This test procedure defines the detailed requirements for performing latchup testing of microcircuits to identify susceptibility to dose rate induced latchup.
DLA
Method
1 /
Active
The purpose of this test is to determine the ability of connectors to withstand the effects of controlled amounts of ozone.
DLA
Method
1 / A
Cancelled
This resistor noise test method is performed for the purpose of establishing the "noisiness" or "noise quality" of a resistor in order to determine its suitability for...
DLA
Method
/
Active
The purpose of this test is to determine the integrity of materials and procedures used to attach semiconductor die or surface mounted passive elements to package...
DLA
Method
10 /
Active
This test is conducted for the purpose of determining the electrical contact reliability of such items as electromechanical relays, switches, etc., under intermediate...
DLA
Method
/
Active
The purpose of this test method is to determine compliance with the specified lambda for semiconductor devices subjected to the specified conditions.
DLA
Method
3 / A w/Change4
Active
This test method is designed to evaluate the short term leakage stability of semiconductor devices under reverse bias conditioning.
DLA
Method
/ A w/Change4
Active