460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to visually inspect glass–encased, double plug, noncavity, axial leaded semiconductor devices for cracks which may affect the...
DLA
Method
1 / A w/Change5
Active
This test is conducted for the purpose of determining the electrical contact reliability of such items as electromechanical relays, switches, etc., under intermediate...
DLA
Method
/
Active
The purpose of this test method is to determine compliance with the specified lambda for semiconductor devices subjected to the specified conditions.
DLA
Method
3 / A w/Change4
Active
This test method is designed to evaluate the short term leakage stability of semiconductor devices under reverse bias conditioning.
DLA
Method
/ A w/Change4
Active
This method establishes a drive source to be used in measuring dynamic performance of digital microelectronic devices, such as TTL, DTL, RTL, ECL, and MOS.
DLA
Method
1 /
Active
The neutron irradiation test is performed to determine the susceptibility of discrete semiconductor devices to degradation in the neutron environment. This test is...
DLA
Method
1 / A w/Change4
Active
This method establishes the load conditions to be used in measuring the static and dynamic performance of digital microelectronic devices such as TTL, DTL, RTL, ECL,...
DLA
Method
1 /
Active
The low dose rate work was performed at 0.10rad(Si)/s and the hig dose rate work was performed at 60rad(Si)/sper MIL-STD-883 Method 1019 as part of the Intersil wafer...
TD
/ 0
Active
The purpose of this test is to measure the input impedance of the device under the specified conditions.
DLA
Method
1 / w/Change1
Active
The purpose of this test method is to determine if the breakdown voltage of the semiconductor device is greater than the specified minimum limit.
DLA
Method
2 / w/Change3
Active