460 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This test method is performed to determine the effectiveness of the seal of semiconductor devices. The immersion of the device under evaluation into liquid at widely...
DLA
Method
1 / A w/Change4
Active
The purpose of this test method is to measure the capacitance across the semiconductor device terminals under specified dc bias and ac signal voltages.
DLA
Method
1 / w/Change3
Active
The purpose of this test method establishes a baseline methodology for characterizing high-voltage transistors to high gamma dose rate radiation and for establishing...
DLA
Method
/ w/Change1
Active
Both the IS-139ASRH and IS-139ASEH are wafer-by-wafer assurance tested per MIL-STD-883H at 300krad(Si) of HDR (50 to 300 rad(Si)/s. Only the IS-139ASEH is...
TD
/ 0.00
Active
The purpose of this test method is to determine the avalanche capability of diodes and rectifiers. The intent of the test is to stress the termination of the device.
DLA
Method
1 / w/Change3
Active
This method tests the capability of a Plastic Encapsulated Microcircuit (PEM) to withstand moisture ingress and to detect flaws in packaging materials.
DLA
Method
2 /
Active
This method establishes the means for assuring circuit performance in regard to the test requirements necessary to verify the specified function and to assure that all...
DLA
Method
/
Active
This method provides a means of judging the quality and acceptability of device interconnect metallization on non-planar oxide integrated circuit wafers or dice.
DLA
Method
6 /
Active
This section describes detailed requirements for a DPA of commonly used quartz crystals. These requirements supplement the general requirements in section 4.
DLA
Method
/ C
Active
The purpose of this test method is to subject the device under test (DUT) to high current stress conditions to determine the ability of the device chip and contacts to...
DLA
Method
6 / w/Change3
Active