461 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This destructive test is intended to determine the integrity of all primary and undercoat lead finishes.
DLA
Method
4 /
Active
The purpose of this method is applicable to power MOSFETs and IGBT.
DLA
Method
2 / w/Change1
Active
This section describes detailed requirements for a DPA of commonly used connectors. These requirements supplement the general requirements in section 4.
DLA
Method
/ C
Active
The purpose of this test is to measure the strength of internal bonds between a semiconductor die and a substrate to which it is attached in a face-bond configuration
DLA
Method
1 /
Active
The purpose of this method establishes a basic test method, test setup, and procedure for measuring the forward gain (magnitude of S21) of GaAs FETs.
DLA
Method
/ w/Change1
Active
total dose test of the IS-2981EH octal source driver. Parts were irradiated to 200 krad(Si) at low dose rate under biased and unbiased conditions as outlined in...
TD
/ 0
Active
The purpose of this test is to measure the drain-to-source voltage of the field-effect transistor or IGBT at the specified value of drain current.
DLA
Method
1 / w/Change1
Active
The purpose of this test is to determine if the breakdown voltage of the gallium arsenide field effect transistor under the specified conditions is greater than the...
DLA
Method
/ w/Change1
Active
This method establishes the means for assuring circuit performance to the limits specified in the applicable acquisition document in regard to output short circuit...
DLA
Method
1 /
Active
The purpose of this test is to measure the dc reverse gate current of the device at a specified reverse gate voltage.
DLA
Method
/ w/Change3
Active