125 results found for MIL-STD-883
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
High dose rate testing to 300 krad(Si) . Low dose rate testing to 150 krad(Si) . The high dose rate irradiations were done at 65 rad(Si)/s and the low dose rate work...
TD
/ 0
Active
Samples were tested at low and high dose rate under biased and unbiased conditions, as outlined in MIL-STD-883 Test Method 1019, to a total dose of 100krad(Si) at LDR...
TD
/
Active
This test is used to determine the effects of constant acceleration on microelectronic devices. It is an accelerated test designed to indicate types of structural and...
DLA
Method
4 /
Active
The purpose of this test is to determine the thermal characteristics of microelectronic devices. This includes junction temperature, thermal resistance, case and...
DLA
Method
1 /
Active
The purpose of this test is to measure bond strengths, evaluate bond strength distributions, or determine compliance with specified bond strength requirements of the...
DLA
Method
10 /
Active
The purpose of this test is to determine the effect on the device of vibration in the frequency range specified.
DLA
Method
2 /
Active
This method establishes the requirements for the lot acceptance testing of microcircuit wafers intended for class level S use.
DLA
Method
8 /
Active
This method establishes qualification and quality conformance inspection procedures for microelectronics to assure that the device and lot quality conforms with the...
DLA
Method
17 /
Active
The purpose of this test method is to quantitatively measure the gas atmosphere inside a metal or ceramic hermetically-sealed device using mass spectrometry methods.
DLA
Method
10 /
Active
This method establishes a means for assuring circuit performance during cold temperature start up. It defines an activation time for digital microelectronic devices...
DLA
Method
1 /
Active