461 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This test is performed for the purpose of determining the effects of acceleration stress on component parts, and to verify the ability of the component parts to...
DLA
Method
/
Active
The purpose of this test method is to measure the voltage across the device when a specified current flows through the device in the forward direction.
DLA
Method
6 / w/Change3
Active
total dose test of the HS-OP470ARH.Parts were tested at low and high dose rate under biased and unbiased conditions as outlined in MIL-STD-883 Test Method 1019.7,to a...
TD
/ 0
Active
Transistor Electrical Test Methods for semiconductor Devices Part 3: Open-circuit output capacitance
The purpose of this test is designed to measure the open-circuit output capacitance of the device under the specified conditions.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the pulse response of the device under the specified conditions.
DLA
Method
/ w/Change3
Active
The purpose of this test method is to quantitatively measure the gas atmosphere inside a metal or ceramic hermetically-sealed semiconductor device using mass...
DLA
Method
6 / A w/Change4
Active
The purpose of this test is to measure the pulse response (td(on), tr, td(off), and tf) of the field effect transistor under the specified conditions.
DLA
Method
/ w/Change1
Active
This section describes detailed requirements for a DPA of commonly used diodes. These requirements supplement the general requirements in section 4.
DLA
Method
/ C
Active
The purpose of this test is to measure the forward-current transfer ratio cut off frequency under the specified conditions.
DLA
Method
/ w/Change1
Active
This test method provides a means of judging the relative resistance of glass encapsulated semiconductor devices to cracking under conditions of thermal stress. It...
DLA
Method
1 / A w/Change4
Active