461 results found for MIL-STD
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
This test method is designed to check the capabilities of the semiconductor device leads, welds and seals to withstand a straight pull.
DLA
Method
5 / A w/Change5
Active
The purpose of this test is to determine if the breakdown voltage of the device under the specified conditions is greater than the specified minimum limit.
DLA
Method
2 / w/Change1
Active
The purpose of this test is to measure the static transconductance of the device under the specified conditions.
DLA
Method
1 / w/Change1
Active
The purpose of this test is to measure the cutoff current of the device under the specified conditions.
DLA
Method
2 / w/Change1
Active
The purpose of this test is to measure the saturation voltage and resistance of the device under the specified conditions.
DLA
Method
/ w/Change1
Active
This test method defines the requirements for testing discrete packaged semiconductor devices for ionizing radiation (total dose) effects from a Cobalt-60 (60Co) gamma...
DLA
Method
6 / A w/Change4
Active
The purpose of this test method is to establish a standard approach for conducting heavy ion irradiation of planar vertical power MOSFET semiconductor devices.
DLA
Method
1 / A w/Change4
Active
The purpose of this test is to detect loose particles inside a device cavity. The test provides a nondestructive means of identifying those devices containing...
DLA
Method
9 /
Active
The purpose of this test procedure is to measure small signal power gain and the noise figure of an amplifier.
DLA
Method
2 /
Active
This test is conducted for the purpose of determining electrical contact reliability under low-level switching conditions in the environment in which the contacts...
DLA
Method
/
Active