


Cross Sectioning for UV EPROM Memory
The cross-sectioning process provides access to the device internal structure, its materials and design. Electronics components are often subjected to cross-sectioning to detect the defects that could not be found using other testing techniques. Cross-sectioning typically involves three discrete steps: mounting the sample in a block of epoxy resin to form the specimen, grinding or cutting the specimen and finally polishing the exposed surface. >> Read more
EEE Parts Results Page
Cross Sectioning for UV EPROM Memory
The cross-sectioning process provides access to the device internal structure, its materials and design. Electronics components are often subjected to cross-sectioning to detect the defects that could not be found using other testing techniques. Cross-sectioning typically involves three discrete steps: mounting the sample in a block of epoxy resin to form the specimen, grinding or cutting the specimen and finally polishing the exposed surface. >> Read more
EEE Parts Results Page
469 results found for UV EPROM/ROM/Memory/Digital/Microcircuits
Part reference
Quality level / QPL
Package
TID (krads)
SEE (MeV/mg/cm2)
Access Time [Max]
Memory Size
Unit price
Lead time
QML Q
Qualified
QPDSIS-38535
Through Hole Mount
CDIP-28
250 ns
256K (32K x 8)
QML Q
Not qualified
QPDSIS-38535
Surface Mount
CQLCC-28
15 ns
64K (8K x 8)
QML Q
Qualified
QPDSIS-38535
Through Hole Mount
CDIP-28
45 ns
256K (32K x 8)
QML Q
Qualified
QPDSIS-38535
Surface Mount
CQLCC-32
250 ns
512K (64K x 8)
QML Q
Qualified
QPDSIS-38535
Through Hole Mount
CDIP-28
150 ns
256K (32K x 8)
QML Q
Qualified
QPDSIS-38535
Surface Mount
CQLCC-32
150 ns
256K (32K x 8)
QML Q
Qualified
QPDSIS-38535
Surface Mount
CQLCC-32
70 ns
256K (32K x 8)
QML Q
Qualified
QPDSIS-38535
Surface Mount
CQLCC-28
25 ns
16K (2K x 8)
QML Q
Not qualified
QPDSIS-38535
Surface Mount
CQLCC-32
55 ns
256K (32K x 8)
QML Q
Qualified
QPDSIS-38535
Through Hole Mount
CDIP-24
25 ns
64K (8K x 8)
Part validation activities
Cost & Activity Matrix