Skip to Content
  • Resources
    • COTS For Space WEBINARS
    • EEE Components
    • SPECIFICATIONS / QPLs
    • Events / Webinars
    • Space Talks
    • Tech Articles
    • Manufacturer Notifications
  • Laboratory Services
    • Laboratory Standard Testing
    • Non Standard Testing
    • Silicon Carbide -SiC- Diodes
    • CrowdTesting
    • Optoelectronics
    • Small Sats
    • Representative Projects / Papers
  • Additional Services
    • Industry 4.0 Cybersecurity (IEC 62443) NEW
    • Penetration Test NEW
    • Cybersecurity Certified (CSC) NEW
    • Code Score Matrix NEW
    • Long-term storage of wafers
    • Electronic Design
  • Tools
    • Comparator
    • MYDCLs / BOMs
    • esa-stockplace
  • About Us
  • Proposal Next
  • Sign In
Cookies on the doEEEt website. We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we'll assume that you are happy to receive all cookies on the doEEEt website. However, if you would like to, you can change your cookie settings at any time. Link to cookies policy.
doEEEt Cross Sectioning for PNP Transistors | doEEEt.com
  • Home
  • How does doEEEt works
  • About us
  • Contact Us
  • Terms of Use
  • Disclaimer
  • Privacy Policy
  • Privacy Policy and Legal Notice
  • Cookie Policy
  • Copyright
  • autosignup2
  • Instant Quote
  • Introducing NanoXplore And Its European FPGA’s ITAR Free
  • Space Talks 3 - Dan Friedlander
  • autosignup3
  • Shopping Cart
  • wpo
  • Data Protection
  • Components
  • Documents
Please enter at least one character to search
ALTER Laboratory Services
Servicio Familia Servicio Familia
Image
Image

Cross Sectioning for PNP Transistors

The cross-sectioning process provides access to the device internal structure, its materials and design. Electronics components are often subjected to cross-sectioning to detect the defects that could not be found using other testing techniques. Cross-sectioning typically involves three discrete steps: mounting the sample in a block of epoxy resin to form the specimen, grinding or cutting the specimen and finally polishing the exposed surface. >> Read more

Fill the form to receive expert assistance from our skilled engineers and technicians

Read Policy

Related content

Microsection images.

Test combination for detecting defects in plastic ICs

Importance of SAM for delamination detection

Importance of the SAM for delamination detection

C-Sam-internal-inspection-

SAM Capabilities, Analyse the internal structure in EEE Parts

Microsection Inspection - Failure Analysis

Failure Analysis in Microsection Inspection

Constructional Analysis

Constructional Analysis in Microsection Inspection

EEE Parts Results Page

Cross Sectioning for PNP Transistors

The cross-sectioning process provides access to the device internal structure, its materials and design. Electronics components are often subjected to cross-sectioning to detect the defects that could not be found using other testing techniques. Cross-sectioning typically involves three discrete steps: mounting the sample in a block of epoxy resin to form the specimen, grinding or cutting the specimen and finally polishing the exposed surface. >> Read more

EEE Parts Results Page

Applications expected requirements
Category
Category
Recommended
More...
Close
  • Discretes
    • Transistor
      • Bipolar
        • PNP

3492 results found for PNP/Bipolar/Transistor/Discretes

Reset
Part reference
Quality level / QPL
TOP
Package
Power Dissipation [Max]
Number of Function per Chip
TID (krads)
Base-Emitter Saturation Voltage [Max]
Collector Current [Max]
Collector-Emitter Saturation Voltage [Max]
Collector-Emitter Voltage (base open) [Max]
Forward Current Transfer Ratio
Unit price
Lead time

JANTXVR2N2904
2N2904 TO-205AD (TO-39)
VPT Components
MIL-PRF-19500/290

Compare DCL / BOM Cart
JANTXV
Qualified
QPDSIS-19500
-55ºC to +150ºC
Through Hole Mount
TO-205AD (TO-39)
800mW
Single
TID (HDR): 100.0
1,3V @Ic=150mA ; Ib=15mA
600mA
0,4V @Ic=150mA ; Ib=15mA
40V
40-120 @Ic=150mA ; Vce=10V

JANS2N5416
2N5416 TO-205AA (TO-5)
VPT Components
MIL-PRF-19500/485

Compare DCL / BOM Cart
JANS
Qualified
QPDSIS-19500
-65ºC to +150ºC
Through Hole Mount
TO-205AA (TO-5)
750mW
Single
1A
2V @Ic=50mA ; Ib=5mA
300V
30-120 @Ic=50mA ; Vce=10V

JANTXVD2N2905AL
2N2905AL TO-205AD (TO-39)
VPT Components
MIL-PRF-19500/290

Compare DCL / BOM Cart
JANTXV
Qualified
QPDSIS-19500
-55ºC to +150ºC
Through Hole Mount
TO-205AD (TO-39)
800mW
Single
TID (HDR): 10.0
1,3V @Ic=150mA ; Ib=15mA
600mA
0,4V @Ic=150mA ; Ib=15mA
60V
100-300 @Ic=150mA ; Vce=10V

JANTXVD2N2904AL
2N2904AL TO-205AA (TO-5)
VPT Components
MIL-PRF-19500/290

Compare DCL / BOM Cart
JANTXV
Qualified
QPDSIS-19500
-55ºC to +150ºC
Through Hole Mount
TO-205AA (TO-5)
800mW
Single
TID (HDR): 10.0
1,3V @Ic=150mA ; Ib=15mA
600mA
0,4V @Ic=150mA ; Ib=15mA
60V
40-120 @Ic=150mA ; Vce=10V

JANTX2N6987U
2N6987U LCC-20
VPT Components
MIL-PRF-19500/558

Compare DCL / BOM Cart
JANTX
Qualified
QPDSIS-19500
-55ºC to +150ºC
Surface Mount
LCC-20
1W
Quad
2,6V @Ic=500mA ; Ib=50mA
600mA
1,6V @Ic=500mA ; Ib=50mA
60V
100-300 @Ic=150mA ; Vce=10V

JANTXVL2N5151L
2N5151L TO-205AA (TO-5)
VPT Components
MIL-PRF-19500/545

Compare DCL / BOM Cart
JANTXV
Qualified
QPDSIS-19500
-55ºC to +150ºC
Through Hole Mount
TO-205AA (TO-5)
1W
Single
TID (HDR): 50.0
2,2V @Ic=5A ; Ib=500mA
2A
1,5V @Ic=5A ; Ib=500mA
80V
30-90 @Ic=2,5A ; Vce=5V

JANTX2N3251AUB
2N3251AUB LCC-4 (UB)
Microsemi a Microchip Company
MIL-PRF-19500/323

Compare DCL / BOM Cart
JANTX
Not qualified
QPDSIS-19500
-55ºC to +150ºC
Surface Mount
LCC-4 (UB)
Single
0,9V @Ic=10mA ; Ib=1mA
200mA
0,25V @Ic=10mA ; Ib=1mA
60V
100-300 @Ic=10mA ; Vce=1V

JAN2N6988
2N6988 FP-14
Microsemi a Microchip Company
MIL-PRF-19500/558

Compare DCL / BOM Cart
JAN
Qualified
QPDSIS-19500
-55ºC to +150ºC
Surface Mount
FP-14
1W
Quad
2,6V @Ic=500mA ; Ib=50mA
600mA
1,6V @Ic=500mA ; Ib=50mA
60V
100-300 @Ic=150mA ; Vce=10V

JANTXVP2N5796
2N5796 TO-78
VPT Components
MIL-PRF-19500/496

Compare DCL / BOM Cart
JANTXV
Qualified
QPDSIS-19500
-55ºC to +150ºC
Through Hole Mount
TO-78
600mW
Dual
TID (HDR): 30.0
1,3V @Ic=150mA ; Ib=15mA
600mA
0,4V @Ic=150mA ; Ib=15mA
60V
40-150 @Ic=150mA ; Vce=10V

JANSD2N2906A
2N2906A TO-206AA (TO-18)
Microsemi a Microchip Company
MIL-PRF-19500/291

Compare DCL / BOM Cart
JANS
Qualified
QPDSIS-19500
-55ºC to +150ºC
Through Hole Mount
TO-206AA (TO-18)
500mW
Single
TID (HDR): 10.0
1,3V @Ic=150mA ; Ib=15mA
600mA
0,4V @Ic=150mA ; Ib=15mA
60V
40-120 @Ic=150mA ; Vce=10V
Part validation activities
Cost & Activity Matrix
  • <
  • 1
  • 2
  • 3
  • 4
  • 5
  • 6
  • 7
  • 8
  • 9
  • >
Alter Technology Laboratory Services
  • Screening
  • Evaluation/Qualification
  • Scanning Acoustic Microscopy
  • RF/Microwave
  • Incoming Inspection
  • DPA

EEE Components
  • Capacitors
  • Microcircuits
  • Resistors
  • Crystals and Oscillators
  • Schottky Barrier Rectifiers
  • Discretes

Laboratory Success Cases
  • GRACE Project
  • XRAY, SAM and Cross Section
  • SiC schottky Diode
  • JUICE Case
  • Deimos Neptuno
  • Melissa III

Company
  • About Us
  • Contact-us
  • How does doEEEt works?
Security & Privacity
  • Privacy Policy and Legal Notice
  • Copyright
  • Contact Clause
  • LinkedIn LinkedIn
  • Twitter Twitter
Copyright © 2025 ALTER TECHNOLOGY TÜV NORD S.A.U
All rights reserved.