208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test is to measure the shunt capacitance of the input terminals of the device under the specified conditions.
DLA
Method
1 / w/Change1
Active
This test method is an accelerated laboratory corrosion test simulating the effects of seacoast atmospheres on semiconductor devices.
DLA
Method
4 / A w/Change4
Active
This test method establishes a procedure for performing dielectric withstanding voltage test (also called high-potential, over potential, voltage breakdown, or...
DLA
Method
1 / A w/Change4
Active
This describes a test method for subjecting the device under test (DUT) to a high power stress condition in the reverse direction of rectifiers to determine the...
DLA
Method
/ w/Change3
Active
The purpose of this test is to determine the ratio of the available RF input power to the available IF output power under specified conditions.
DLA
Method
3 / w/Change3
Active
The purpose of this test is to measure the resistive component of the small-signal, short-circuit input impedance of the device under the specified conditions.
DLA
Method
/ w/Change1
Active
The purpose of this test method is to determine the effect on the semiconductor device of vibration in the frequency range specified.
DLA
Method
2 / A w/Change5
Active
The purpose of this test method is to measure the reverse current leakage through a device at a specified reverse voltage using a dc method or an ac method, as...
DLA
Method
5 / w/Change3
Active
The purpose of this test method is to measure the turn-off time of the device under the specified conditions.
DLA
Method
/ w/Change3
Active
Mechanical Test Methods for Semiconductor Devices Part 2: Bond strength (destructive bond pull test)
The purpose of this test method is to measure bond strengths, evaluate bond strength distributions, or determine compliance with specified bond strength requirements...
DLA
Method
1 / A w/Change5
Active