208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to check the physical dimensions of the semiconductor device.
DLA
Method
/ A w/Change5
Active
The purpose of this test method is to provide a referee condition for the evaluation of the solderability of terminations (including leads up to .125 inch (3.18 mm) in...
DLA
Method
13 / A w/Change5
Active
The constant acceleration test is used to determine the effect on semiconductor devices of a centrifugal force.
DLA
Method
2 / A w/Change5
Active
This test method describes procedures and evaluation guidelines for the destructive physical analysis (DPA) of wire bonded semiconductor devices.
DLA
Method
2 / A w/Change4
Active
The purpose of this test method is to verify the construction and workmanship of bipolar transistors, field effect transistors (FET), discrete monolithic, multichip,...
DLA
Method
9 / A w/Change4
Active
The purpose of this test method is to verify the construction and workmanship of semiconductor devices utilizing junction passivated diode and rectifiers chips that...
DLA
Method
1 / A w/Change4
Active
The purpose of this test is to measure the input admittance of the device under the specified conditions.
DLA
Method
/ w/Change1
Active
The purpose of this test is to measure the reverse breakdown impedance of the device under smallsignal conditions.
DLA
Method
3 / w/Change3
Active
This test method is performed to determine the effectiveness of the seal of semiconductor devices. The immersion of the device under evaluation into liquid at widely...
DLA
Method
1 / A w/Change4
Active
The purpose of this test method is to measure the capacitance across the semiconductor device terminals under specified dc bias and ac signal voltages.
DLA
Method
1 / w/Change3
Active