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doEEEt Displacement Damage Test for EEPROM Memory
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Displacement Damage Test for EEPROM Memory

Displacement Damage is the result of nuclear interactions, typically scattering, which cause lattice defects. This effect degrades minority carrier lifetime; a typical effect would be gain degradation and leakage current in bipolar transistors. Displacement damage depends on the loss of non-ionizing energy , i.e. energy and momentum transfer to lattice atoms, which depends on the mass and energy of the incident quanta. A simple measure like for ionizing radiation is not possible, so displacement damage must be specified for a specific particle type and energy. >> Read more

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EEE Parts Results Page

Displacement Damage Test for EEPROM Memory

Displacement Damage is the result of nuclear interactions, typically scattering, which cause lattice defects. This effect degrades minority carrier lifetime; a typical effect would be gain degradation and leakage current in bipolar transistors. Displacement damage depends on the loss of non-ionizing energy , i.e. energy and momentum transfer to lattice atoms, which depends on the mass and energy of the incident quanta. A simple measure like for ionizing radiation is not possible, so displacement damage must be specified for a specific particle type and energy. >> Read more

EEE Parts Results Page

Applications expected requirements
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  • Microcircuits
    • Digital
      • Memory
        • ROM
          • EEPROM

1532 results found for EEPROM/ROM/Memory/Digital/Microcircuits

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Part reference
Quality level / QPL
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Package
TID (krads)
SEE (MeV/mg/cm2)
Access Time [Max]
Memory Size
Unit price
Lead time

5962-9461402HXC
WE32K32N-120HQ
Mercury Systems Inc
5962-94614

Compare DCL / BOM Cart
QML H
Qualified
QPDSIS-38534
-55ºC to +125ºC
Through Hole Mount
HIP-66 (With Standoffs)
120 ns
1M (32K x 32)

5962-9458502H5A
WE128K32-250H1Q
Mercury Systems Inc
5962-94585

Compare DCL / BOM Cart
QML H
Qualified
QPDSIS-38534
-55ºC to +125ºC
Through Hole Mount
HIP-66 (With Standoffs)
250 ns
4M (128K x 32)

5962-9458508HZC
AS8ER128K32QB-200/88
Micross Components
5962-94585

Compare DCL / BOM Cart
QML H
Not qualified
QPDSIS-38534
-55ºC to +125ºC
Surface Mount
CQFP-68 (Gull Wing)
200 ns
4M (128K x 32)

5962-8751411XA
PYA28C64B-90CWMB
Pyramid Semiconductor
5962-87514

Compare DCL / BOM Cart
QML Q
Qualified
QPDSIS-38535
-55ºC to +125ºC
Through Hole Mount
CDIP-28
90 ns
64K (8K x 8)

5962-9679605HYA
WME128K8-140CQ
Mercury Systems Inc
5962-96796

Compare DCL / BOM Cart
QML H
Qualified
QPDSIS-38534
-55ºC to +125ºC
Through Hole Mount
CDIP-32
140 ns
1M (128K x 8)

5962-8751421XA
PYA28C64X-20CWMB
Pyramid Semiconductor
5962-87514

Compare DCL / BOM Cart
QML Q
Qualified
QPDSIS-38535
-55ºC to +125ºC
Through Hole Mount
CDIP-28
200 ns
64K (8K x 8)

5962-8751417YA
PYA28C64-15L32MB
Pyramid Semiconductor
5962-87514

Compare DCL / BOM Cart
883
Qualified
QPDSIS-38535
-55ºC to +125ºC
Surface Mount
CQLCC-32
150 ns
64K (8K x 8)

5962-9461403HMC
WE32K32-90G2Q
Mercury Systems Inc
5962-94614

Compare DCL / BOM Cart
QML H
Qualified
QPDSIS-38534
-55ºC to +125ºC
Surface Mount
CQFP-68
90 ns
1M (32K x 32)

5962-9461402HZA
WE32K32-120G2UQ
Mercury Systems Inc
5962-94614

Compare DCL / BOM Cart
QML H
Qualified
QPDSIS-38534
-55ºC to +125ºC
Surface Mount
CQFP-68
120 ns
1M (32K x 32)

5962-9458504H9A
WE128K32-150G1UQ
Mercury Systems Inc
5962-94585

Compare DCL / BOM Cart
QML H
Qualified
QPDSIS-38534
-55ºC to +125ºC
Surface Mount
CQFP-68
150 ns
4M (128K x 32)
Part validation activities
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