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Displacement Damage Test for DRAM Memory

Displacement Damage is the result of nuclear interactions, typically scattering, which cause lattice defects. This effect degrades minority carrier lifetime; a typical effect would be gain degradation and leakage current in bipolar transistors. Displacement damage depends on the loss of non-ionizing energy , i.e. energy and momentum transfer to lattice atoms, which depends on the mass and energy of the incident quanta. A simple measure like for ionizing radiation is not possible, so displacement damage must be specified for a specific particle type and energy. >> Read more

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Displacement Damage Test for DRAM Memory

Displacement Damage is the result of nuclear interactions, typically scattering, which cause lattice defects. This effect degrades minority carrier lifetime; a typical effect would be gain degradation and leakage current in bipolar transistors. Displacement damage depends on the loss of non-ionizing energy , i.e. energy and momentum transfer to lattice atoms, which depends on the mass and energy of the incident quanta. A simple measure like for ionizing radiation is not possible, so displacement damage must be specified for a specific particle type and energy. >> Read more

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