2012 results found for MIL-STD-883 methods
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test is to determine the integrity of materials and procedures used to attach semiconductor die or surface mounted passive elements to package...
DLA
Method
10 /
Active
This method establishes screening procedures for total lot screening of microelectronics to assist in achieving levels of quality and reliability commensurate with the...
DLA
Method
13 /
Active
The purpose of the life characterization tests is to determine: (1) the life distributions, (2) the life acceleration characteristics, and (3) the failure rate (λ)...
DLA
Method
2 /
Active
This test procedure defines the detailed requirements for performing latchup testing of microcircuits to identify susceptibility to dose rate induced latchup.
DLA
Method
1 /
Active
The purpose of this test is to inspect passive elements used for microelectronic applications, including RF/microwave, for the visual defects described herein.
DLA
Method
3 /
Active
The neutron irradiation test is performed to determine the susceptibility of semiconductor devices to nonionizing energy loss (NIEL) degradation.
DLA
Method
3 /
Active
The purpose of this examination is to nondestructively detect unbonded regions, delaminations and/or voids in the die attach material and at interfaces within devices...
DLA
Method
2 /
Active
The purpose of this test is to visually inspect the internal materials, construction, and workmanship of hybrid, multichip and multichip module microcircuits.
DLA
Method
13 /
Active
The purpose of this test is to determine the effectiveness (hermeticity) of the seal of microelectronic devices with designed internal cavities.
DLA
Method
17 /
Active
This method establishes the requirements for the lot acceptance testing of microcircuit wafers intended for class level S use.
DLA
Method
8 /
Active