208 results found for MIL-STD-750
Reference
Title
Source
Type / Subtype
Date
Issue / Rev
Status
The purpose of this test method is to determine compliance with the specified lambda for semiconductor devices subjected to the specified conditions.
DLA
Method
3 / A w/Change4
Active
This test method is designed to evaluate the short term leakage stability of semiconductor devices under reverse bias conditioning.
DLA
Method
/ A w/Change4
Active
The neutron irradiation test is performed to determine the susceptibility of discrete semiconductor devices to degradation in the neutron environment. This test is...
DLA
Method
1 / A w/Change4
Active
The purpose of this test is to measure the input impedance of the device under the specified conditions.
DLA
Method
1 / w/Change1
Active
The purpose of this test method is to determine if the breakdown voltage of the semiconductor device is greater than the specified minimum limit.
DLA
Method
2 / w/Change3
Active
This test method is designed to measure the breakdown voltage of voltage regulator and voltage-reference semiconductor devices under the specified conditions.
DLA
Method
/ w/Change3
Active
The purpose of this test is to measure the rectified microwave diode current under conditions for conversion loss.
DLA
Method
/ w/Change3
Active
The purpose of this test method is to monitor the semiconductor device parameter for a discontinuity under the specified conditions.
DLA
Method
1 / A w/Change4
Active
This test method is designed to measure the average reverse current through the device under the specified conditions.
DLA
Method
1 / w/Change3
Active
The purpose of this test method is to establish the integrity of the semiconductor die attachment to the package header or other substrate.
DLA
Method
3 / A w/Change5
Active