MIL-STD-750, Method 3151 Transistor Electrical Test Methods for semiconductor Devices Part 3: Thermal resistance, general

General data

The purpose of this test is to measure the temperature rise per unit power dissipation of the designated junction above the case of the device or ambient temperature, under conditions of steady state operation.
/ w/Change1
Active
09/12/2019 0:00:00
0 pages

Document history

Reference
MIL-STD-750, Method 3151

Document preview

Previous
{{docCtrl.currentPage}} of {{docCtrl.totalPages}} Pages
Next

Related documents

Related documents