MIL-STD-750, Method 3103 Transistor Electrical Test Methods for semiconductor Devices Part 3: Thermal impedance measurements for insulated gate bipolar transistors
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The purpose of this test is to measure the thermal impedance of the insulated gate bipolar transistors (IGBT) under the specified conditions of applied voltage, current, and pulse duration.
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MIL-STD-750, Method 3103
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