MIL-STD-750, Method 3476 Transistor Electrical Test Methods for semiconductor Devices Part 3: Test procedure for measuring dv_dt during reverse recovery of power MOSFET transistors
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The purpose of this test is to define a way for verifying the diode recovery stress capability of power MOSFET transistors. The focus is on simplicity and practicality.
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09/12/2019 0:00:00
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MIL-STD-750, Method 3476
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