MIL-STD-750, Method 3510 Transistor Electrical Test Methods for semiconductor Devices Part 3: 1dB compression point of a GaAs field effect transistor (FET)
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The purpose of this method establishes a basic test circuit for the purpose of determining the 1 dB compression point of a gallium arsenide FET.
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MIL-STD-750, Method 3510
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