XOs RK105 and VCXOs RK205 products specifically designed for New Space applications, have the following characteristics:
Series | Dimensions | Logic type | Frequency | Stability (FVST) |
---|---|---|---|---|
RK105 XO | 5.0 x 3.2 x 1.2 mm | CMOS, LVDS, LVPECL | 8 – 1500 MHz | ±30 ppm: -40 to 85°C, ±50 ppm: -55 to 125°C |
RK205 VCXO | 5.0 x 3.2 x 1.2 mm | CMOS, LVDS, LVPECL | 8 – 1500 MHz | ±30 ppm: -40 to 85°C, ±50 ppm: -55 to 125°C |
1) Operating temperature:
- Option I: -40°C to 85°C
- Option M: -55°C to 125°C
2) Hermetically sealed package
3) Different screening options (100%)
Screening Operation | Requirements and Condition | EM | FM0 | FM1 | FM2 |
---|---|---|---|---|---|
Stabilization bake (prior to seal) | MIL-STD-883 method 1008, condition C | N/A | 24h@150°C | 24h@150°C | 24h@150°C |
Thermal shocks | MIL-STD-883, method 1011, condition A | N/A | |||
Temperature cycling | MIL-STD-883, method 1010, condition B | N/A | |||
Constant acceleration | MIL-STD-883, method 1010, condition A Acceleration: 5000g, curing 60s in direction Y1 | N/A | |||
PIND test | MIL-STD-883, method 2020, condition B | ||||
Seal test | Fine leak: MIL-STD-883, method 1014, condition A2 Gross leak: CEI 68-2-17 Test Qc, Method 1 | ||||
Pre burn-in measurement | Following the guidelines of MIL-PRF-55310, §4.8.5, §4.8.6, §4.8.11, and §4.8.20 | Note 1 | Note 2 | Note 2 | |
Burn-in | Temperature: +125°C; Pressure: Patm Supply; Voltage: Vcc nom; Load: Load nom | N/A | N/A | 160h min. | 160h min. |
Post burn-in measurement | Following the guidelines of MIL-PRF-55310 | N/A | N/A | ||
PDA | Following the guidelines of MIL-PRF-55310 | N/A | N/A | 20% | 10% |
External visual Inspection | MIL-STD-883, Method 2009 | N/A | N/A |
Note 1: Electrical verification.
Note 2:
- MIL-STD-105E general inspection level, AQL level 1.0.
- 100 pcs batch: test on 13 pcs / 0 rejected.
- 500 pcs batch: test on 20 pcs / 0 reject accepted.
- 1000 pcs batch: test on 50 pcs / 1 reject accepted.
4) Products have been radiation tested up to the following levels without any events
Values | TID (LDR as per ESCC22900) | SEL (MeV/mg/cm2) | SET (MeV/mg/cm2) | SEFI (MeV/mg/cm2) |
---|---|---|---|---|
CMOS | 100 kRad | 32.4 | 20 | 62.5 |
LVDS | 72 kRad | 32.4 | 10 | 62.5 |
LVPECL | 72 kRad | 62.5 | 10 | 62.5 |