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Additional info
4100 results found for
Part reference
Description
Specification
Quality level
Qualification Status
Space qualified
Package
Single Event Upset (Error Rate)
Operating Temperature [Max]
Electrostatic Discharge Sensitivity
Storage Temperature [Max]
Single Event Gate Rupture (Linear Energy Transfer)
Potentially Sensitive to Total Ionizing Dose (Low Dose Rate)
Number of Pins
Single Event Dielectric Rupture (Linear Energy Transfer)
Operating Temperature [Min]
Dose Rate Survivality
Finish
Single Event Upset (Linear Energy Transfer)
Memory Cell Saturated Cross Section
Transient Upset
Dose Rate Latchup
Neutron Irradiation
Single Event Latch-up (Linear Energy Transfer)
Potentially Sensitive to Single Event Effect
Storage Temperature [Min]
Single Event Transient (Linear Energy Transfer)
Package Class
Dose Rate Upset
Qualification Status
Package
Single Event Burnout (Linear Energy Transfer)
Single Event Funcional Interrupt (Linear Energy Transfer)
Potentially Sensitive to Total Ionizing Dose (High Dose Rate)
Total Ionizing Dose (Low Dose Rate)
Total Ionizing Dose (High Dose Rate)
Potentially Sensitive to Total Non-ionizing Dose
Junction Temperature [Max]
Weight [Max]
Collector-Emitter Voltage (base open) [Max]
Rise Time [Max]
Collector Current [Max]
Technology
Fall Time [Max]
Power Dissipation Tc = 25 ºC [Max]
Thermal Resistance, Junction to Ambient [Max]
Collector-Base Voltage (emitter open) [Max]
Power Dissipation [Max]
Thermal Resistance, Junction to Soldering Point [Max]
Type
Forward Current Transfer Ratio
Thermal Resistance, Junction to Case [Max]
Number of Function per Chip
Turn-off Time [Max]
Pulse Response [Max]
Noise Figure [Max]
Delay Time [Max]
Output Capacitance, (common base) input open circuit [Max]
Storage Time [Max]
Turn-on Time [Max]
Collector-Emitter Saturation Voltage [Max]
Collector to Emitter Breakdown Voltage
Junction Temperature [Min]
Transition frequency [Min]
Emitter-Base Voltage (collector open) [Max]
Input Capacitance, (common base) collector open circuit [Max]
Base-Emitter Saturation Voltage [Max]
Stock
Alerts
Obs&PCN
Heritage
Radiation
Prev. Test
Hi-Rel NPN bipolar transistor 80 V - 1 A
2N3700_STM_DS
EM
N
Not Applicable
LCC-3
Y
Gold plating, electro-deposited
N
Surface-Mount Device
N
LCC-3
Y
Y
80V
1A
500mW
80V
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Switching Type 2N5339 and 2N5339U3 JAN, JANTX,...
MIL-PRF-19500/560
JAN
Y
QPDSIS-19500
TO-39
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Through-Hole-Mount Device
Y
TO-39
Y
Y
200ºC
100V
100ns
5000mA
SILICON
200ns
17,5W
100V
1W
Switching
60-240 @Ic=2A ; Vce=2V
Single
100ns
250pF
2000ns
0,7V @Ic=2000mA ; Ib=200mA
100V
-65ºC
6V
1000pF
1,2V @Ic=2000mA ; Ib=200mA
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Low-Power Types 2N2484, 2N2484UA, 2N2484UB, JAN,...
MIL-PRF-19500/376
JANS
Y
QPDSIS-19500
LCC-4 (UBC)
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Surface-Mount Device
Y
LCC-4 (UBC)
Y
Y
200ºC
60V
50mA
SILICON
60V
0,36W
Low Power
250-800 @Ic=0,5mA ; Vce=5V
Single
7,5db
0,3V @Ic=1mA ; Ib=0,1mA
60V
-65ºC
60MHz
6V
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Low-Power, Types 2N3019, 2N3019S, 2N3057A,...
MIL-PRF-19500/391
JANHC
Y
QPDSIS-19500
DIE
Solderable iaw MIL-STD-750
DIE
Y
DIE
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Power Switching, Types: 2N4150, 2N5237, 2N5238,...
MIL-PRF-19500/394
JANHC
Y
QPDSIS-19500
DIE
Solderable iaw MIL-STD-750
DIE
Y
DIE
N/A
N/A
N/A
N/A
N/A
N/A
Transistor, Unitized Dual, Radiation Hardened, NPN, Silicon, Types 2N2919, 2N2920, JAN, JANTX,...
MIL-PRF-19500/355
JANTXV
Y
QPDSIS-19500
LCC-6
Solderable iaw MIL-STD-750
Surface-Mount Device
Y
LCC-6
N/A
N/A
N/A
N/A
N/A
NPN general purpose transistors
BCW60_PHI_DS
COMMERCIAL
N
Not Applicable
SOT-23
Y
Not Available
N
Surface-Mount Device
N
SOT-23
Y
Y
32V
100mA
250mW
32V
N/A
N/A
N/A
N/A
N/A
N/A
Transistors Low Power RF NPN, based on type 2N3019
ESCC 5201/011
ESCC C
N
ESCC QPL
TO-39
200ºC
200ºC
Y
-65ºC
Hot Solder Dip
N
-65ºC
Through-Hole-Mount Device
N
TO-39
Y
Y
2g
80V
1000mA
SILICON
5W
218,8ºC/W
140V
0,8W
Low Power,High Frequency
50-200 @Ic=0,1mA ; Vce=10V
35ºC/W
Single
30ns
4db
12pF
0,2V @Ic=150mA ; Ib=15mA
80V
7V
60pF
1,1V @Ic=150mA ; Ib=15mA
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Switching, Types 2N2221A-L, 2N2222A-L,...
MIL-PRF-19500/255
JANTXV
Y
QPDSIS-19500
LCC-4 (UB)
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Surface-Mount Device
Y
LCC-4 (UB)
Y
100krad(Si)
100krad(Si)
Y
200ºC
50V
800mA
SILICON
75V
0,5W
Switching
100-300 @Ic=150mA ; Vce=10V
Single
300ns
35ns
0,3V @Ic=150mA ; Ib=15mA
50V
-65ºC
250MHz
6V
1,2V @Ic=150mA ; Ib=15mA
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Switching, Types 2N2221A-L, 2N2222A-L,...
MIL-PRF-19500/255
JAN
Y
QPDSIS-19500
LCC-4 (UB)
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Surface-Mount Device
Y
LCC-4 (UB)
Y
Y
200ºC
50V
800mA
SILICON
75V
0,5W
Switching
100-300 @Ic=150mA ; Vce=10V
Single
300ns
35ns
0,3V @Ic=150mA ; Ib=15mA
50V
-65ºC
250MHz
6V
1,2V @Ic=150mA ; Ib=15mA
N/A
N/A