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4100 results found for
Part reference
Description
Specification
Quality level
Qualification Status
Space qualified
Package
Single Event Upset (Error Rate)
Operating Temperature [Max]
Electrostatic Discharge Sensitivity
Storage Temperature [Max]
Single Event Gate Rupture (Linear Energy Transfer)
Potentially Sensitive to Total Ionizing Dose (Low Dose Rate)
Number of Pins
Single Event Dielectric Rupture (Linear Energy Transfer)
Operating Temperature [Min]
Dose Rate Survivality
Finish
Single Event Upset (Linear Energy Transfer)
Memory Cell Saturated Cross Section
Transient Upset
Dose Rate Latchup
Neutron Irradiation
Single Event Latch-up (Linear Energy Transfer)
Potentially Sensitive to Single Event Effect
Storage Temperature [Min]
Single Event Transient (Linear Energy Transfer)
Package Class
Dose Rate Upset
Qualification Status
Package
Single Event Burnout (Linear Energy Transfer)
Single Event Funcional Interrupt (Linear Energy Transfer)
Potentially Sensitive to Total Ionizing Dose (High Dose Rate)
Total Ionizing Dose (Low Dose Rate)
Total Ionizing Dose (High Dose Rate)
Potentially Sensitive to Total Non-ionizing Dose
Junction Temperature [Max]
Weight [Max]
Collector-Emitter Voltage (base open) [Max]
Rise Time [Max]
Collector Current [Max]
Technology
Fall Time [Max]
Power Dissipation Tc = 25 ºC [Max]
Thermal Resistance, Junction to Ambient [Max]
Collector-Base Voltage (emitter open) [Max]
Power Dissipation [Max]
Thermal Resistance, Junction to Soldering Point [Max]
Type
Forward Current Transfer Ratio
Thermal Resistance, Junction to Case [Max]
Number of Function per Chip
Turn-off Time [Max]
Pulse Response [Max]
Noise Figure [Max]
Delay Time [Max]
Output Capacitance, (common base) input open circuit [Max]
Storage Time [Max]
Turn-on Time [Max]
Collector-Emitter Saturation Voltage [Max]
Collector to Emitter Breakdown Voltage
Junction Temperature [Min]
Transition frequency [Min]
Emitter-Base Voltage (collector open) [Max]
Input Capacitance, (common base) collector open circuit [Max]
Base-Emitter Saturation Voltage [Max]
Stock
Alerts
Obs&PCN
Heritage
Radiation
Prev. Test
Hi-Rel NPN bipolar transistor 40 V - 0.8 A
2N2222A_STM_DS
EM
N
Not Applicable
LCC-3
Y
Gold plating, electro-deposited
N
Surface-Mount Device
N
LCC-3
Y
Y
40V
800mA
500mW
40V
N/A
N/A
Hi-Rel NPN bipolar transistor 60 V - 50 Ma
2N2484_STM_DS
EM
N
Not Applicable
LCC-3
Y
Gold plating, electro-deposited
N
Surface-Mount Device
N
LCC-3
Y
Y
60V
50mA
360mW
60V
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Power Types 2N4865, 2N5250, 2N5251, JANTX,...
MIL-S-19500/380
JANTX
Y
QPDSIS-19500
TO-114
Y
Solderable iaw MIL-STD-750
N
Point-to-Point-Wiring Device
Y
TO-114
Y
Y
100V
50A
350W (Tc)
15-50 @Ic=40A ; Vce=5V
100V
N/A
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Unitized, Dual-Transistor, NPN, Silicon, Types 2N5793, 2N5794, and 2N5794U,...
MIL-PRF-19500/495
JANTXV
Y
QPDSIS-19500
LCC-6
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Surface-Mount Device
Y
LCC-6
Y
Y
200ºC
40V
600mA
SILICON
75V
0,5W
Switching
100-300 @Ic=150mA ; Vce=10V
Dual
310ns
8pF
45ns
0,3V @Ic=150mA ; Ib=15mA
40V
-65ºC
200MHz
6V
33pF
1,2V @Ic=150mA ; Ib=15mA
N/A
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Unitized, NPN, Silicon, Switching, Four Transistor Array Types 2N6989,...
MIL-PRF-19500/559
JANS
Y
QPDSIS-19500
DIL-14
Solderable iaw MIL-STD-750
Through-Hole-Mount Device
Y
DIL-14
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Switching, Types 2N2221A-L, 2N2222A-L,...
MIL-PRF-19500/255
JANS
N
QPDSIS-19500
TO-18
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Through-Hole-Mount Device
N
TO-18
Y
50krad(Si)
Y
50V
800mA
500mW
50V
N/A
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Switching, Types 2N3506, 2N3506A, 2N3506L,...
MIL-PRF-19500/349
JANS
Y
QPDSIS-19500
TO-39
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Through-Hole-Mount Device
Y
TO-39
Y
Y
200ºC
40V
30ns
3000mA
SILICON
35ns
5W
60V
1W
Switching
40-200 @Ic=1,5A ; Vce=2V
Single
15ns
55ns
1V @Ic=1500mA ; Ib=150mA
40V
-65ºC
60MHz
5V
1,3V @Ic=1500mA ; Ib=150mA
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Switching, Types 2N2221A-L, 2N2222A-L,...
MIL-PRF-19500/255
JANS
Y
QPDSIS-19500
LCC-4
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Surface-Mount Device
Y
LCC-4
Y
500krad(Si)
Y
200ºC
50V
800mA
SILICON
75V
0,5W
Switching
40-120 @Ic=150mA ; Vce=10V
Single
300ns
35ns
0,3V @Ic=150mA ; Ib=15mA
50V
-65ºC
250MHz
6V
1,2V @Ic=150mA ; Ib=15mA
N/A
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Low-Power, Types 2N3019, 2N3019S, 2N3057A,...
MIL-PRF-19500/391
JANTXV
Y
QPDSIS-19500
TO-39
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Through-Hole-Mount Device
Y
TO-39
Y
Y
100-300 @Ic=150mA ; Vce=10V
N/A
N/A
N/A
N/A
N/A
Semiconductor Device, Transistor, NPN, Silicon, Power Switching, Types: 2N4150, 2N5237, 2N5238,...
MIL-PRF-19500/394
JANS
Y
QPDSIS-19500
TO-5
150ºC
200ºC
Y
-55ºC
Solderable iaw MIL-STD-750
N
-65ºC
Through-Hole-Mount Device
Y
TO-5
Y
Y
200ºC
170V
500ns
10000mA
SILICON
500ns
15W
200V
1W
High Power,Switching
40-120 @Ic=5A ; Vce=5V
Single
50ns
350pF
1500ns
0,6V @Ic=5000mA ; Ib=500mA
170V
-65ºC
15MHz
10V
1,5V @Ic=5000mA ; Ib=500mA
N/A
N/A
N/A
N/A
N/A
N/A