5962F0422901VYA UT6325YCA - Cobham Colorado Springs

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General data

Microcircuit, Memory, Digital, CMOS, Field Programmable Gate Array (FPGA) 320K Gates with 24 Dual-Port SRAM Modules, Radiation Hardened, Monolithic Silicon
5962F0422901VYA
UT6325YCA
Cobham Colorado Springs
QML V
Not qualified
QPDSIS-38535 12-Sep-2016
QFP-288

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Estimated prices and leadtimes

ATN Activities estimated price and leadtime:
 
RVT
 
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DPA
600
8
 
Alter standard dpa activities (please ask for any customized request):
  • External Visual Inspection
  • CSAM (Only for plastic and with added costing)
  • Hermeticity (If applicable)
  • PIND Test (If cavity)
  • Solderability
  • Marking Permanence
  • Terminal Strength (Not for chip or leadless)
  • Internal Visual Inspection
  • SEM Inspection
  • Bond Pull Test
  • Die Shear Test
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INCOMING
250
4
 
Alter standard incoming inspection activities (lot size < 280 pcs, please ask for any customized request):
  • Open of primary package
  • Manual count of pieces (for high quantities indirect methods are considered)
  • Homogenity lot verification (same marking, serialization, homogenous look)
  • SLDC verification
  • System update with component marking, date code and serial number
  • Documentation review (CoC, Datapack)
  • Weight and dimensions
  • External Visual Inspection (AQL 0,65 level II)
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RELIFING
60
50
35
400
4
 
Alter standard relifing activities (please ask for any customized request):
  • Cavity devices: External Visual Inspection, Electrical Measurements (price valid for existing developments), Hermeticity , Solderability in 1 PIECE (if applicable)
  • NO Cavity devices: External Visual Inspection, Electrical Measurements (price valid for existing developments), Solderability in 1 PIECE (if applicable)
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PIND
250
4
 
Mechanical Test Method Standard for Microcircuits, Particle impact noise detection test:
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XRF
100
4
 
XRF Comments:
  • X-ray fluorescence equipment (XRF) is used to perform the material analysis. XRF allows to identify the metals present in complex samples while providing quantitative accuracy sufficient to preclude prohibited material or its inadequate proportions.
  • Material Analysis is performed to detect and identify the materials used in the manufacturing of semiconductors and microelectronic parts and packages. One particular use of this analysis is the detection of prohibited materials, especially in the lead finish, to identify potential reliability issues such as undesirable whisker growth caused by pure tin finishes. Lead finish validation for every component type to be soldered is essencial to determine the correct soldering profile.
  • Material analysis is typically performed during the incoming inspection when scan locations for the analysis are selected depending on the specific requirements and the detailed specification of each part. It also may be implemented as a go/no-go test when specific requirements need to be checked, or may include read-and-record measurements and graphical analysis of the data obtained.
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Documentation

Type
Name
Issue
Rev
Date
Generic spec.
MIL-PRF-38535
L
-
06/12/2018 0:00:00
Download
Detailed spec.
5962-04229
C
-
10/11/2016 0:00:00
Download
QPL/QML
QPDSIS-38535
15-Jan-19
-
15/01/2019 0:00:00
Download

EEE parts validation according to quality project requirements

Parameters

Radiation: Potential Sensitivity
N
N
Y
Y
CMOS: SEL (except SOI), SEU, SEDR, SEFI, SED
CMOS TECHNOLOGY. Effect only exhibited by bipolar or BiCMOS devices, when equivalent proton fluence>2EXP11 p/cm2 (50 Mev)
Subclassification
CMOS
SRAM
Radiation Features: SEE
112 MeV/mg/cm2
2.2EXP-8 errors/bit-day (logic cell flip flops) 1.9EXP-10 errors/bit-day (logic cell flip flop - TMR mode) 6.9EXP-10 errors/bit-day (embedded SRAM)
>42 MeV/mg/cm2 logic cell flip flops >64 MeV/mg/cm2embedded SRAM
4.5EXP-7cm2/bit logic cell flip flops 8.0EXP-8cm2/bit logic cell flip flops-TMR mode 9.6EXP-8cm2/bit embebed RAM
Mechanical Data
Ceramic
Hot Solder Dip
QFP-288
Surface Mount
288
Radiation Features: TID & TNID
CMOS TECHNOLOGY. Just devices using bipolar technology are sensistive to low dose rate effect.
dose rate = 50 – 300 rads(Si)/s
1.0EXP14 neutrons/cm2
300krad(Si)
Generic Functional & Electrical
150ºC
6ºC/W
-65ºC to +150ºC
2,5W
-55ºC to +125ºC
Specific Functional & Electrical
120MHz
163
320000
55300 bits
9
LVTTL,LVCMOS3,PCI
1536
YES
Qualification Status
N

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