Heavy ion failure rate computation based on sensitive volume characterization in GaN

Posted by doEEEt Media Group
On September 16, 2022
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In particular, details will be provided on the evaluation of domain extension to High voltage applications through modeling of heavy ion effects on long-term reliability.

GaN based 300W Ultra High Power Density Adapter; EMC and Filter Design Considerations

Posted by doEEEt Media Group
On March 24, 2022
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Würth Elektronik Webinar with ON Semiconductor

Wide Bandgap Materials.

Posted by doEEEt Media Group
On March 17, 2022
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Silicon has been the leading semiconductor material for more than 50 years, and has been one of the primary building blocks of the modern computing and power electronics industries.

HEATPACK: Higher thermal dissipation in space systems

Posted by Juan Moreno Echarri
On June 29, 2021
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HEATPACK (High thErmAl efficiency componenTs PACKages for space) is the European effort to develop the next generation of low thermal resistance packages, in particular thanks to the implementation of state-of-the-art diamond-based composite materials and disruptive new heat sink solutions.

Knowles Precision Devices Released 100nF Single Layer Ceramic V-series Capacitor

Posted by doEEEt Media Group
On March 12, 2021
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Knowles Precision Devices are expanding its V-Series of single-layer capacitors by 100nF capacitor. In RF bypassing applications, the 100nF can help eliminate supply line noise. High-frequency monolithic microwave integrated circuit (MMIC) amplifiers with broadband gain need to be protected from RF noise on supply lines. Supply noise can mix with RF signals, impacting signal-to-noise ratios and potentially causing spurious output. A bypass capacitor provides an efficient path to the ground for RF energy on the supply line before it enters a gain stage.

Passive Components for GaN Based Devices

Posted by doEEEt Media Group
On February 15, 2021
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GaN-based power and RF (Radio Frequency) devices are now available from multiple manufacturers at affordable prices. AVX released a technical paper written by Ron Demcko and Daniel West on high-performance passive components for GaN devices.

Kemet Hermetically Sealed Tantalum Polymer Capacitors for GaN Devices

Posted by Kemet Electronic Corporation
On August 10, 2020
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Gallium Nitride semiconductors allow designers to operate at higher frequencies and voltages than their silicon counterparts, enabling..

Temperature Stability Assessment of GaN Power Amplifiers

Posted by Tomáš Zedníček
On July 5, 2020
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Ta capacitors have become the favorite choice for BIAS decoupling GaN power amps, ensuring stability at various conditions, keeping the GaN transistor working point within the high linearity region.

The 2020 top technology trends in GaN power devices

Posted by doEEEt Media Group
On March 23, 2020
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GaN power transistors will be the transistor of choice on the rollout of 5G because of power density, energy efficiency, and system size requirements for macro and micro base stations for broadband delivery. GaN RF transistors will play an important part for the power amplifiers of those base stations.

Slogan GaN based technologies

Posted by doEEEt Media Group
On January 13, 2020
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SLOGAN is an international research project co-funded from EU 7th Framework Programme. The project Space Qualification of High-Power SSPA based on GaN technology (SLOGAN) aims at designing, developing, implementing a GaN SSPA Engineering Qualification Model (EQM) for the next generation of Galileo satellites.