CMSE 2020

Posted by doEEEt Media Group
On April 20, 2021
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The Annual Components for Military & Space Electronics Conference & Exhibition is an event focused on the design, reliability, and application of electronic components for use in avionics aerospace, military & commercial space systems.

Kemet Hermetically Sealed Tantalum Polymer Capacitors for GaN Devices

Posted by Kemet Electronic Corporation
On August 10, 2020
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Gallium Nitride semiconductors allow designers to operate at higher frequencies and voltages than their silicon counterparts, enabling..

HEATPACK: Higher thermal dissipation in space systems

Posted by Juan Moreno Echarri
On June 29, 2020
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HEATPACK (High thErmAl efficiency componenTs PACKages for space) is the European effort to develop the next generation of low thermal resistance packages, in particular thanks to the implementation of state-of-the-art diamond-based composite materials and disruptive new heat sink solutions.

The 2020 Top Technology Trends in GaN Power

Posted by doEEEt Media Group
On March 23, 2020
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GaN power transistors will be the transistor of choice on the rollout of 5G because of power density, energy efficiency, and system size requirements for macro and micro base stations for broadband delivery. GaN RF transistors will play an important part for the power amplifiers of those base stations.

Wide Bandgap Materials.

Posted by doEEEt Media Group
On March 17, 2020
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Silicon has been the leading semiconductor material for more than 50 years, and has been one of the primary building blocks of the modern computing and power electronics industries.

Slogan GaN based technologies

Posted by doEEEt Media Group
On January 13, 2020
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SLOGAN is an international research project co-funded from EU 7th Framework Programme. The project Space Qualification of High-Power SSPA based on GaN technology (SLOGAN) aims at designing, developing, implementing a GaN SSPA Engineering Qualification Model (EQM) for the next generation of Galileo satellites.

Temp Stability of GaN Amp with Tantalum Capacitors

Posted by Tomáš Zedníček
On July 5, 2019
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Ta capacitors have become the favorite choice for BIAS decoupling GaN power amps, ensuring stability at various conditions, keeping the GaN transistor working point within the high linearity region.