Electrical Characterization at 500ºC for GRACE Project
- Posted by Juan Moreno Echarri
- On August 26, 2021
- 0
Alter Technology has developed a test setup capable of electrically characterize the radiation sensors at temperatures of 500°C and higher.
Within the framework of the Graphene-enhanced RAdiation detector on Silicon Carbide for harsh Environments (GRACE) project, Alter Optoelectronics laboratory in Madrid, Spain, has developed a test setup capable of electrically characterize the radiation sensors at temperatures of 500°C and higher.
Optoelectronics and Innovation department at Alter Technology
Juan Moreno has a bachelor’s degree in physics and since 2010 works in the Optoelectronics and Innovation department of Alter Technology. In charge of the BepiColombo/SolO SiC blocking diodes as a test engineer for years, has also successfully managed and executed 3 ESA ITTs related with SiC. These studies were not only related with high power SiC diodes but also with the effects of the radiation in other devices such SiC JFET and MOSFETs in experimental state with enhanced radiation tolerance. Nowadays, he is the technical contact point for the SiC diodes development in Alter Technology.
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