- Posted by doEEEt Media Group
- On February 14, 2020
This engineer service, focus in radiation in electronic devices, shows a Test Vehicle TID radiation. In order to advance the report, a few conclusion had been made by our expertise team. First, is the diffusion lots, the two ones under TID behave the same. They are homogenous which confirms there is no process dispersion.
We can observed that no functional failure observed during the test and after annealing.
In IOs (LVDS, BIDIR and I2C): No drift out of specification was observed up to 300 krads (Si). Cold Sparing far below 100 nA max specification. Cold spare LVDS IO operates at 2.5V up to 650 Mbps.
The lock time measurements: An increase lower than 1% was observed on this parameter. The worst case “Lock tim
e” drift was observed on one biased sample with a time lock decrease of maximum 4%,
i.e. from 38.1μs to 36.9μs after 300 krads (Si).
The total Jitter measurements: No drift out of specification was observed up to 300 krads (Si). An increase of maximum 2% was observed on this parameter. The worst case drift was observed on biased samples with a total jitter increase of 8% from 306ps to 322ps.
Overall the PLL1201 is fully immune to TID at the maximum cumulated dose, here set to 300 krads (Si).
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